(China (Mainland))
Product Summary
Hynix NAND HY27UF084G2B-TPIB has 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3 Vcc Power Supply, and with x8 and x16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Parametrics
HY27UF084G2B-TPIB absolute maximum ratings: (1)TA: Ambient Operating Temperature (Commercial Temperature Range): 0 to 70℃; (2)Ambient Operating Temperature (Industrial Temperature Range): -40 to 85℃; (3)TBIAS Temperature Under Bias: -50 to 125 ℃; (4)TSTG Storage Temperature: -65 to 150 V; (5)VIO Input or Output Voltage -0.6 to 4.6 V; (6)Vcc Supply Voltage: -0.6 to 4.6 V.
Features
HY27UF084G2B-TPIB features: (1)Cost effective solutions for mass storage applications; (2)Array is split into two independent planes; (3)x8/x16 bus width; (4)supply voltage: 3.3V device : Vcc = 2.7 V ~3.6 V; (5)Block erase time: 1.5ms (Typ); (6)Multi-block erase time (2 blocks) : 1.5ms (Typ); (7)100,000 Program/Erase cycles (with 1bit/528byte ECC); (8)10 years Data Retention.
Diagrams
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