(China (Mainland))
Product Summary
Offered in 32M x 8bit, the K9F5608U0D-PIB0 is 256M bit with spare 8M bit capacity. The K9F5608U0D-PIB0 is offered in 1.8V, 2.65V, 3.3V Vcc. K9F5608U0D-PIB0’s NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The K9F5608U0D-PIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Parametrics
K9F5608U0D-PIB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN/OUT: -0.6 to +4.6V; (2)Voltage on any pin relative to VSS, VCC: -0.6 to +4.6V; (3)Voltage on any pin relative to VSS, VCCQ: -0.6 to +4.6V; (4)Temperature Under Bias: -10 to +125℃; (5)Storage Temperature, TSTG: -65 to +150℃; (6)Short Circuit Current, IOS: 5mA.
Features
K9F5608U0D-PIB0 features: (1)Voltage Supply, 3.3V device: 2.7 to 3.6V; (2)Memory Cell Array: (32M + 1024K)bit x 8 bit; (3)Data Register: (512 + 16)bit x 8bit; (4)Automatic Program and Erase; (5)Page Program: (512 + 16)Byte; (6)Block Erase: (16K + 512)Byte; (7)Page Read Operation; (8)Page Size: (512 + 16)Byte; (9)Random Access: 15μs(Max); (10)Serial Page Access: 50ns(Min); (11)Fast Write Cycle Time; (12)Command/Address/Data Multiplexed I/O Port; (13)Hardware Data Protection; (14)Reliable CMOS Floating-Gate Technology; (15)Command Register Operation; (16)Intelligent Copy-Back; (17)Unique ID for Copyright Protection.
Diagrams
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 K9F5608D0C |
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K9F5608D0D |
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K9F5608Q0B-DCB0 |
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K9F5608Q0B-DIB0 |
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K9F5608Q0B-HCB0 |
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K9F5608Q0B-HIB0 |
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